Author Correction: A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors

• Walid Amir,
• Ju‑Won Shin,
• Ki‑Yong Shin,
• Jae‑Moo Kim,
• Chu‑Young Cho,
• Kyung‑Ho Park,
• Takuya Hoshi,
• Takuya Tsutsumi,
• Hiroki Sugiyama,
• Hideaki Matsuzaki,
• Tae‑Woo Kim

Affiliations

Walid Amir

Department of Electrical, Electronic and Computer Engineering, University of Ulsan

Ju‑Won Shin

Department of Electrical, Electronic and Computer Engineering, University of Ulsan

Ki‑Yong Shin

Department of Electrical, Electronic and Computer Engineering, University of Ulsan

Jae‑Moo Kim

Korea Advanced Nano Fab Center

Chu‑Young Cho

Korea Advanced Nano Fab Center

Kyung‑Ho Park

Korea Advanced Nano Fab Center

Takuya Hoshi

NTT Device Technology Laboratories, NTT Corporation

Takuya Tsutsumi

NTT Device Technology Laboratories, NTT Corporation

Hiroki Sugiyama

NTT Device Technology Laboratories, NTT Corporation

Hideaki Matsuzaki

NTT Device Technology Laboratories, NTT Corporation

Tae‑Woo Kim

Department of Electrical, Electronic and Computer Engineering, University of Ulsan