A new trench gate field stop insulated gate bipolar transistor (IGBT) with a significant reduction in Miller capacitance

Abstract

Abstract In this paper, a new trench‐gate field‐stop insulated gate bipolar transistor (IGBT) structure having improved performances is proposed, investigated and compared with the properties of the conventional trench‐gate field‐stop IGBT. An npn structure is introduced to the gate trench in order to reduce the Miller capacitance and gate‐collector charge through the introduction of the two diode capacitances in series. The simulation results demonstrate that the proposed structure exhibits a significant improvement in the following two aspects, without degrading the other performances. The first is the reduction of the Miller capacitance by 92.0% and 48.3% at Vce = 0 V and Vce = 20 V, respectively and the second is the reduction in gate‐collector charge by 66.7%.