Review of Silicon Carbide Processing for Power MOSFET
Catherine Langpoklakpam,
An-Chen Liu,
Kuo-Hsiung Chu,
Lung-Hsing Hsu,
Wen-Chung Lee,
Shih-Chen Chen,
Chia-Wei Sun,
Min-Hsiung Shih,
Kung-Yen Lee,
Hao-Chung Kuo
Affiliations
Catherine Langpoklakpam
Department of Photonics, Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
An-Chen Liu
Department of Photonics, Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
Kuo-Hsiung Chu
Department of Photonics, Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
Lung-Hsing Hsu
Department of Photonics, Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
Wen-Chung Lee
Department of Photonics, Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
Shih-Chen Chen
Semiconductor Research Center, Hon Hai Research Institute, Taipei 11492, Taiwan
Chia-Wei Sun
Department of Photonics, Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
Min-Hsiung Shih
Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei 11529, Taiwan
Kung-Yen Lee
Department of Engineering Science and Ocean Engineering, National Taiwan University, Taipei 10617, Taiwan
Hao-Chung Kuo
Department of Photonics, Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage, higher thermal conductivity, higher operating frequency, higher operating temperature, and higher saturation drift velocity, SiC has attracted much attention from researchers and the industry for decades. With the advances in material science and processing technology, many power applications such as new smart energy vehicles, power converters, inverters, and power supplies are being realized using SiC power devices. In particular, SiC MOSFETs are generally chosen to be used as a power device due to their ability to achieve lower on-resistance, reduced switching losses, and high switching speeds than the silicon counterpart and have been commercialized extensively in recent years. A general review of the critical processing steps for manufacturing SiC MOSFETs, types of SiC MOSFETs, and power applications based on SiC power devices are covered in this paper. Additionally, the reliability issues of SiC power MOSFET are also briefly summarized.
