Nature Communications (May 2017)

Giant electron-hole transport asymmetry in ultra-short quantum transistors

  • A. C. McRae,
  • V. Tayari,
  • J. M. Porter,
  • A. R. Champagne

DOI
https://doi.org/10.1038/ncomms15491
Journal volume & issue
Vol. 8, no. 1
pp. 1 – 8

Abstract

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By utilizing electron-hole asymmetry in ultra-short single-walled carbon nanotube (SWCNT) transistors, McRaeet al., develop ‘two-in-one’ SWCNT quantum devices that can switch from behaving as quantum-dot transistors for holes to quantum buses for electrons by changing the transistor’s gate voltage