Enhancing the absorption figure of merit on solution-based CuO thin films by Ni doping

Abstract

We evaluated an absorbance effectiveness on the solar spectrum using an absorption figure of merit (a-FOM) for the conducting thin films. In particular, Ni-doped and un-doped CuO thin films were deposited by a facile and sustainable solution-processed synthesis, whose Ni doping concentration was varied to be 0.2, 0.6, 1, 2, 3, 4 wt%. We observed a change of smooth surface to an appearance of nanoparticles by Ni doping, which supported to form of a plasmonic mechanism for improving the light capture and retention. The absorption of long wavelengths was improved and extended to the near-infrared range. That is, the bandgap energy decreased from 2.10 to 1.88 eV with Ni doping. Also, we found that the absorption length decreased from 99.93 nm to 63.80 nm as the Ni doping increased. In addition, the CuO-based film with 4 wt% Ni doping showed a maximal value of a-FOM as high as 30.88 Ω−1cm−1, corresponding to a resistance of 2.07 MΩ/sq and an absorption length of 63.80 nm. Our finding suggested that Ni-doped CuO thin films can be considered as an excellent selection of absorbent conductive oxide layers for application in optoelectronic devices and solar cell systems.

Keywords

• CuO
• Ni doping
• Oxide semiconductor
• Absorption length
• Absorption figure of merit