IEEE Photonics Journal (Jan 2021)

Single-Nanosecond-Pulse Lasing in Heavily Doped Fe:ZnSe

  • Vladimir A. Antonov,
  • Vladimir V. Bukin,
  • Timophey V. Dolmatov,
  • Konstantin N. Firsov,
  • Evgeny M. Gavrishchuk,
  • Igor G. Kononov,
  • Petr A. Obraztsov,
  • Sergey V. Podlesnykh,
  • Mariya V. Ponarina,
  • Anatoly A. Sirotkin,
  • Nikolay V. Zhavoronkov

DOI
https://doi.org/10.1109/JPHOT.2020.3046363
Journal volume & issue
Vol. 13, no. 1
pp. 1 – 7

Abstract

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We investigated room-temperature pulsed lasing in heavily doped Fe:ZnSe single crystals. The active elements were pumped by a Q-switched Cr3+:Yb3+:Ho3+:YSGG laser operating at 2.87 μm. Our results show that the generation of short laser pulses has a deep high-frequency modulation associated with relaxation dynamics in Fe:ZnSe. The lasing regime obtained in this study provides a straightforward way to generate mid-IR single nanosecond pulses at moderate pump energies. Moreover, we found a relation between the lasing pulse duration and the concentration of Fe2+ doping ions, and we experimentally demonstrated pulse shortening in heavily doped active crystals. Single-pulse lasing with an FWHM pulse duration of ~2.8 ns was achieved in ZnSe crystals doped with 2.3 · 1019 cm-3 Fe2+ ions. The demonstrated single-pulse lasing regime is applicable for seeding high-power mid-IR laser systems.

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