Scientific Reports (Nov 2022)

Effect of high-pressure D2 and H2 annealing on LFN properties in FD-SOI pTFET

  • Hyun-Jin Shin,
  • Sunil Babu Eadi,
  • Yeong-Jin An,
  • Tae-Gyu Ryu,
  • Do-woo Kim,
  • Hi-Deok Lee,
  • Hyuk-Min Kwon

DOI
https://doi.org/10.1038/s41598-022-22575-5
Journal volume & issue
Vol. 12, no. 1
pp. 1 – 9

Abstract

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Abstract Tunneling field-effect transistors (TFETs) are a promising candidate for the next generation of low-power devices, but their performance is very sensitive to traps near the tunneling junction. This study investigated the effects of high-pressure deuterium (D2) annealing and hydrogen (H2) annealing on the electrical performance and low-frequency noise (LFN) of a fully depleted silicon-on-insulator p-type TFET. Without high-pressure annealing, the typical noise power spectral density exhibited two Lorentzian spectra that were affected by fast and slow trap sites. With high-pressure annealing, the interface trap density related to fast trap sites was reduced. The passivation of traps near the tunneling junction indicates that high-pressure H2 and D2 annealing improves the electrical performance and LFN properties, and it may become a significant and necessary step for realizing integrated TFET technology in the future.