MXene-GaN van der Waals metal-semiconductor junctions for high performance multiple quantum well photodetectors

Lingzhi Luo; Yixuan Huang; Keming Cheng; Abdullah Alhassan; Mahdi Alqahtani; Libin Tang; Zhiming Wang; Jiang Wu

doi:10.1038/s41377-021-00619-1

Light: Science & Applications (Sep 2021)

MXene-GaN van der Waals metal-semiconductor junctions for high performance multiple quantum well photodetectors

Lingzhi Luo,
Yixuan Huang,
Keming Cheng,
Abdullah Alhassan,
Mahdi Alqahtani,
Libin Tang,
Zhiming Wang,
Jiang Wu

Affiliations

Lingzhi Luo: Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China
Yixuan Huang: Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China
Keming Cheng: Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China
Abdullah Alhassan: Materials Department, University of California
Mahdi Alqahtani: King Abdulaziz City for Science and Technology (KACST)
Libin Tang: Kunming Institute of Physics
Zhiming Wang: Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China
Jiang Wu: Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China

DOI: https://doi.org/10.1038/s41377-021-00619-1
Journal volume & issue: Vol. 10, no. 1
pp. 1 – 11

Abstract

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A MXene-GaN van der Waals Metal-Semiconductor Junctions based High Performance Multiple Quantum Well Photodetector was demonstrated, which shows great potential for underwater wireless optical communication and turbidity sensing.

Published in Light: Science & Applications

ISSN: 2047-7538 (Online)
Publisher: Nature Publishing Group
Country of publisher: United Kingdom
LCC subjects: Technology: Engineering (General). Civil engineering (General): Applied optics. Photonics; Science: Physics: Optics. Light
Website: https://www.nature.com/lsa/

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