npj 2D Materials and Applications (Jul 2017)

Moiré-related in-gap states in a twisted MoS2/graphite heterojunction

  • Chun-I Lu,
  • Christopher J. Butler,
  • Jing-Kai Huang,
  • Yu-Hsun Chu,
  • Hung-Hsiang Yang,
  • Ching-Ming Wei,
  • Lain-Jong Li,
  • Minn-Tsong Lin

DOI
https://doi.org/10.1038/s41699-017-0030-6
Journal volume & issue
Vol. 1, no. 1
pp. 1 – 6

Abstract

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Heterointerfaces: Gap states in a twisted heterojunction New moiré-related states emerge in the bandgap of molybdenum disulfide when interfaced with highly oriented pyrolytic graphite. Two-dimensional materials enable designer heterostructures to be created layer-by-layer, but greater understanding of how different interfaces affect the electronic structure is required if they are to be fully exploited for applications. An international team of researchers led by Minn-Tsong Lin from National Taiwan University use low-temperature scanning tunneling microscopy and spectroscopy to show that in-gap states can form at molybdenum disulfide/graphite heterointerfaces, which are sensitive to both the stacking angle and local strain, and have a small dependence on the moiré superstructure. These tunable in-gap states, which are attributed to interlayer charges, show the complexity, but also potential of using stacking and strain for engineering the electronic structure of heterostructures.