Relaxable Damage in Hot-Carrier Stressing of n-MOS Transistors

Abstract

A method for device characterization is experimented to qualify the relaxable damage in hot-carrier stressing of n-MOS transistors. The degradation of physical parameters of the body-drain junction of power HEXFETs is presented for applied stress condition Vg= Vd/2. Large decrease of the resistance series, of the ideality factor, and of the reverse recombination current are shown to be related to relaxation time, and are significant at Vg=–Vd. These effects are discussed and explained by the evolution of the interface states.

Keywords

• Stress
• relaxation
• diode parameters.