Advanced Materials Interfaces (Apr 2024)

Broadband, Plasmon‐Modified SnSe2 Photodetector Based on LNOI Thin‐Film Platform

  • Yi Liu,
  • Wenqing Sun,
  • Zixu Sa,
  • Fengjing Liu,
  • Feng Ren,
  • Zaixing Yang,
  • Yuechen Jia,
  • Xiaoli Sun,
  • Feng Chen

DOI
https://doi.org/10.1002/admi.202301094
Journal volume & issue
Vol. 11, no. 10
pp. n/a – n/a

Abstract

Read online

Abstract Lithium niobate on insulator (LNOI) is widely recognized as an essential optoelectronic integration platform due to its unique ferroelectric properties and photorefractive effect. However, the wide bandgap and weak absorption of lithium niobate limit its further application in integrated photodetection field. To address this issue, encapsulating silver nanoparticles within the LNOI structure are proposed to manipulate the light field distribution of modified lithium niobate through the localized surface plasmon resonance (LSPR) effect and utilize the modified lithium niobate thin film as a functional substrate to tailor the optoelectronic properties of surface SnSe2 nanosheets, significantly enhancing their photodetection capabilities. The photocurrent of the SnSe2 photodetector based on LNOI with embedded Ag nanoparticles is enhanced by up to 1912 times compared to that on the original LNOI under the same conditions, which represents the highest reported plasmonic‐induced photodetection enhancement. This work deepens the basic research on plasmonic‐modified 2D materials and ferroelectric materials, which promotes the development of on‐chip photodetectors and the realization of fully functional photonic circuits that integrate all essential components on a single chip.

Keywords