Processing and Application of Ceramics (Jun 2017)

An ab initio prediction study of the electronic structure and elastic properties of V3GeC2

  • Guobing Ying,
  • Fengchen Ma,
  • Lin Su,
  • Xiaodong He,
  • Cheng Zhang,
  • Zhonghua Dai,
  • Hong Luo,
  • Shanyi Du,
  • Cheng Wang

DOI
https://doi.org/10.2298/PAC1702082Y
Journal volume & issue
Vol. 11, no. 2
pp. 82 – 86

Abstract

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The electronic structure and elastic properties of the ternary layered carbide V3GeC2 were investigated by the first-principle plane-wave pseudopotential total energy calculation method based on density functional theory. It is found that the computed P63/mmc lattice constants and internal coordinates are a = 2.9636 Å, c = 17.2256 Å and zV2 = 0.1325, zC = 0.5712, respectively. The predictable cohesive energy of V3GeC2 reflects that it could be a stable Mn+1AXn phase like Ti3GeC2 and V2GeC, while the band structure shows that the V3GeC2 has anisotropic electrical conductivity, with a high density of states at the Fermi energy. The V3GeC2 exhibits potential anisotropic elastic properties, as well as self-lubricating and ductile behaviour, related to the V–Ge bonds being relatively weaker than the V–C bonds.

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