Communications Materials (Jul 2021)

Evolution of defect formation during atomically precise desulfurization of monolayer MoS2

  • Jong-Young Lee,
  • Jong Hun Kim,
  • Yeonjoon Jung,
  • June Chul Shin,
  • Yangjin Lee,
  • Kwanpyo Kim,
  • Namwon Kim,
  • Arend M. van der Zande,
  • Jangyup Son,
  • Gwan-Hyoung Lee

DOI
https://doi.org/10.1038/s43246-021-00185-4
Journal volume & issue
Vol. 2, no. 1
pp. 1 – 10

Abstract

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Desulfurization of MoS2 alters its chemical and physical properties by breaking structural symmetry. Here, the atomic-scale mechanistic pathway by which this occurs is investigated during plasma etching, and changes in chemical structure and physical properties are revealed.