Science and Technology of Advanced Materials (Dec 2023)

Pseudo-transistors for emerging neuromorphic electronics

  • Jingwei Fu,
  • Jie Wang,
  • Xiang He,
  • Jianyu Ming,
  • Le Wang,
  • Yiru Wang,
  • He Shao,
  • Chaoyue Zheng,
  • Linghai Xie,
  • Haifeng Ling

DOI
https://doi.org/10.1080/14686996.2023.2180286
Journal volume & issue
Vol. 24, no. 1

Abstract

Read online

ABSTRACTArtificial synaptic devices are the cornerstone of neuromorphic electronics. The development of new artificial synaptic devices and the simulation of biological synaptic computational functions are important tasks in the field of neuromorphic electronics. Although two-terminal memristors and three-terminal synaptic transistors have exhibited significant capabilities in the artificial synapse, more stable devices and simpler integration are needed in practical applications. Combining the configuration advantages of memristors and transistors, a novel pseudo-transistor is proposed. Here, recent advances in the development of pseudo-transistor-based neuromorphic electronics in recent years are reviewed. The working mechanisms, device structures and materials of three typical pseudo-transistors, including tunneling random access memory (TRAM), memflash and memtransistor, are comprehensively discussed. Finally, the future development and challenges in this field are emphasized.

Keywords