High Ms Fe16N2 thin film with Ag under layer on GaAs substrate
Xiaowei Zhang,
Yanfeng Jiang,
Meiyin Yang,
Lawrence F. Allard,
Jian-Ping Wang
Affiliations
Xiaowei Zhang
The Center for Micromagnetics and Information Technologies (MINT) & Electrical and Computer Engineering Department, University of Minnesota, Minneapolis, Minnesota 55455, USA
Yanfeng Jiang
The Center for Micromagnetics and Information Technologies (MINT) & Electrical and Computer Engineering Department, University of Minnesota, Minneapolis, Minnesota 55455, USA
Meiyin Yang
The Center for Micromagnetics and Information Technologies (MINT) & Electrical and Computer Engineering Department, University of Minnesota, Minneapolis, Minnesota 55455, USA
Lawrence F. Allard
High Temperature Materials Laboratory, Materials Science and Technology Division, Oak Ridge National Laboratory, Tennessee 37831, USA
Jian-Ping Wang
The Center for Micromagnetics and Information Technologies (MINT) & Electrical and Computer Engineering Department, University of Minnesota, Minneapolis, Minnesota 55455, USA
(001) textured Fe16N2 thin film with Ag under layer is successfully grown on GaAs substrate using a facing target sputtering (FTS) system. After post annealing, chemically ordered Fe16N2 phase is formed and detected by X-ray diffraction (XRD). High saturation magnetization (Ms) is measured by a vibrating sample magnetometer (VSM). In comparison with Fe16N2 with Ag under layer on MgO substrate and Fe16N2 with Fe under layer on GaAs substrate, the current layer structure shows a higher Ms value, with a magnetically softer feature in contrast to the above cases. In addition, X-ray photoelectron spectroscopy (XPS) is performed to characterize the binding energy of N atoms. To verify the role of strain that the FeN layer experiences in the above three structures, Grazing Incidence X-ray Diffraction (GIXRD) is conducted to reveal a large in-plane lattice constant due to the in-plane biaxial tensile strain.
