Definition of CVD Graphene Micro Ribbons with Lithography and Oxygen Plasma Ashing
Fernando C. Rufino,
Aline M. Pascon,
Luana C.J. Espindola,
Frederico H. Cioldin,
Dunieskys R.G. Larrudé,
José A. Diniz
Affiliations
Fernando C. Rufino
University of Campinas, School of Electrical and Computer Engineering, Av. Albert Einstein, 400, Cidade Universitária, Campinas, Brazil, 13083-852; Correspondingauthor. Tel: +55 19 99604 6080.
Aline M. Pascon
University of Campinas, School of Electrical and Computer Engineering, Av. Albert Einstein, 400, Cidade Universitária, Campinas, Brazil, 13083-852
Luana C.J. Espindola
University of Campinas, Center for Semiconductor Components and Nanotechnologies, R. João Pandia Calógeras, 90, Cidade Universitária, Campinas, Brazil, 13083-870
Frederico H. Cioldin
University of Campinas, Center for Semiconductor Components and Nanotechnologies, R. João Pandia Calógeras, 90, Cidade Universitária, Campinas, Brazil, 13083-870
Dunieskys R.G. Larrudé
Mackenzie Presbyterian University, MackGraphe – Graphene and Nanomaterials Research Center, R. da Consolação, 896, Consolação, São Paulo, Brazil, 01302-907
José A. Diniz
University of Campinas, School of Electrical and Computer Engineering, Av. Albert Einstein, 400, Cidade Universitária, Campinas, Brazil, 13083-852
This work presents the definition of CVD (Chemical Vapor Deposition) Graphene Micro Ribbons (GMRs) with traditional Photolithography and Oxygen Plasma Ashing, where: (i) CVD Graphene Micro Ribbons were defined in parallel and serpentine patterns; (ii) The defined width dimensions of GMRs are between 0.23 µm and 10 µm; (iii) The empirical calibration curve between physical and mask widths of GMRs was obtained; (iv) With our method, Graphene Field-Effect Transistors, GFETs, can be fabricated with parallel GMRs as conduction channel between source and drain. It is important to notice that parallel channels are used in Silicon Nano Wires 3D Transistors, such as FinFETs. Our method is based on low-cost lithography, compared to commonly found in the literature, based on the definition of graphene patterns by Electron Beam Lithography (high cost and low repeatability techniques). Also, graphene's good quality characteristics remain after GMRs fabrication, as proven by Raman spectroscopy. In conclusion, our method to define the GMRs is suitable for GFET technology.
