Definition of CVD Graphene Micro Ribbons with Lithography and Oxygen Plasma Ashing

Abstract

This work presents the definition of CVD (Chemical Vapor Deposition) Graphene Micro Ribbons (GMRs) with traditional Photolithography and Oxygen Plasma Ashing, where: (i) CVD Graphene Micro Ribbons were defined in parallel and serpentine patterns; (ii) The defined width dimensions of GMRs are between 0.23 µm and 10 µm; (iii) The empirical calibration curve between physical and mask widths of GMRs was obtained; (iv) With our method, Graphene Field-Effect Transistors, GFETs, can be fabricated with parallel GMRs as conduction channel between source and drain. It is important to notice that parallel channels are used in Silicon Nano Wires 3D Transistors, such as FinFETs. Our method is based on low-cost lithography, compared to commonly found in the literature, based on the definition of graphene patterns by Electron Beam Lithography (high cost and low repeatability techniques). Also, graphene's good quality characteristics remain after GMRs fabrication, as proven by Raman spectroscopy. In conclusion, our method to define the GMRs is suitable for GFET technology.

Keywords

• Graphene
• Photolithography
• Oxygen Plasma Ashing
• GFET technology