Near ultraviolet photonic integrated lasers based on silicon nitride
Anat Siddharth,
Thomas Wunderer,
Grigory Lihachev,
Andrey S. Voloshin,
Camille Haller,
Rui Ning Wang,
Mark Teepe,
Zhihong Yang,
Junqiu Liu,
Johann Riemensberger,
Nicolas Grandjean,
Noble Johnson,
Tobias J. Kippenberg
Affiliations
Anat Siddharth
Laboratory of Photonics and Quantum Measurements, Swiss Federal Institute of Technology Lausanne (EPFL), CH-1015 Lausanne, Switzerland
Thomas Wunderer
Palo Alto Research Center, Palo Alto, California 94304, USA
Grigory Lihachev
Laboratory of Photonics and Quantum Measurements, Swiss Federal Institute of Technology Lausanne (EPFL), CH-1015 Lausanne, Switzerland
Andrey S. Voloshin
Laboratory of Photonics and Quantum Measurements, Swiss Federal Institute of Technology Lausanne (EPFL), CH-1015 Lausanne, Switzerland
Camille Haller
Laboratory of Advanced Semiconductors for Photonics and Electronics, Swiss Federal Institute of Technology Lausanne (EPFL), CH-1015 Lausanne, Switzerland
Rui Ning Wang
Laboratory of Photonics and Quantum Measurements, Swiss Federal Institute of Technology Lausanne (EPFL), CH-1015 Lausanne, Switzerland
Mark Teepe
Palo Alto Research Center, Palo Alto, California 94304, USA
Zhihong Yang
Palo Alto Research Center, Palo Alto, California 94304, USA
Junqiu Liu
Laboratory of Photonics and Quantum Measurements, Swiss Federal Institute of Technology Lausanne (EPFL), CH-1015 Lausanne, Switzerland
Johann Riemensberger
Laboratory of Photonics and Quantum Measurements, Swiss Federal Institute of Technology Lausanne (EPFL), CH-1015 Lausanne, Switzerland
Nicolas Grandjean
Laboratory of Advanced Semiconductors for Photonics and Electronics, Swiss Federal Institute of Technology Lausanne (EPFL), CH-1015 Lausanne, Switzerland
Noble Johnson
Palo Alto Research Center, Palo Alto, California 94304, USA
Tobias J. Kippenberg
Laboratory of Photonics and Quantum Measurements, Swiss Federal Institute of Technology Lausanne (EPFL), CH-1015 Lausanne, Switzerland
Low phase noise lasers based on the combination of III–V semiconductors and silicon photonics are well established in the near-infrared spectral regime. Recent advances in the development of low-loss silicon nitride-based photonic integrated resonators have allowed them to outperform bulk external diode and fiber lasers in both phase noise and frequency agility in the 1550 nm-telecommunication window. Here, we demonstrate for the first time a hybrid integrated laser composed of a gallium nitride-based laser diode and a silicon nitride photonic chip-based microresonator operating at record low wavelengths as low as 410 nm in the near-ultraviolet wavelength region suitable for addressing atomic transitions of atoms and ions used in atomic clocks, quantum computing, or for underwater LiDAR. By self-injection locking of the Fabry–Pérot diode laser to a high-Q (0.4 × 106) photonic integrated microresonator, we reduce the optical phase noise at 461 nm by a factor greater than 100×, limited by the device quality factor and back-reflection.
