A nonvolatile magnon field effect transistor at room temperature

Jun Cheng; Rui Yu; Liang Sun; Kang He; Tongzhou Ji; Man Yang; Zeyuan Zhang; Xueli Hu; Heng Niu; Xi Yang; Peng Chen; Gong Chen; Jiang Xiao; Fengzhen Huang; Xiaomei Lu; Hongling Cai; Huaiyang Yuan; Bingfeng Miao; Haifeng Ding

doi:10.1038/s41467-024-53524-7

Nature Communications (Oct 2024)

A nonvolatile magnon field effect transistor at room temperature

Jun Cheng,
Rui Yu,
Liang Sun,
Kang He,
Tongzhou Ji,
Man Yang,
Zeyuan Zhang,
Xueli Hu,
Heng Niu,
Xi Yang,
Peng Chen,
Gong Chen,
Jiang Xiao,
Fengzhen Huang,
Xiaomei Lu,
Hongling Cai,
Huaiyang Yuan,
Bingfeng Miao,
Haifeng Ding

Affiliations

Jun Cheng: National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, and Collaborative Innovation Center of Advanced Microstructures
Rui Yu: National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, and Collaborative Innovation Center of Advanced Microstructures
Liang Sun: National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, and Collaborative Innovation Center of Advanced Microstructures
Kang He: National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, and Collaborative Innovation Center of Advanced Microstructures
Tongzhou Ji: National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, and Collaborative Innovation Center of Advanced Microstructures
Man Yang: National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, and Collaborative Innovation Center of Advanced Microstructures
Zeyuan Zhang: National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, and Collaborative Innovation Center of Advanced Microstructures
Xueli Hu: National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, and Collaborative Innovation Center of Advanced Microstructures
Heng Niu: National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, and Collaborative Innovation Center of Advanced Microstructures
Xi Yang: National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, and Collaborative Innovation Center of Advanced Microstructures
Peng Chen: National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, and Collaborative Innovation Center of Advanced Microstructures
Gong Chen: National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, and Collaborative Innovation Center of Advanced Microstructures
Jiang Xiao: Department of Physics, Fudan University
Fengzhen Huang: National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, and Collaborative Innovation Center of Advanced Microstructures
Xiaomei Lu: National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, and Collaborative Innovation Center of Advanced Microstructures
Hongling Cai: National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, and Collaborative Innovation Center of Advanced Microstructures
Huaiyang Yuan: Institute for Advanced Study in Physics, Zhejiang University
Bingfeng Miao: National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, and Collaborative Innovation Center of Advanced Microstructures
Haifeng Ding: National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, and Collaborative Innovation Center of Advanced Microstructures

DOI: https://doi.org/10.1038/s41467-024-53524-7
Journal volume & issue: Vol. 15, no. 1
pp. 1 – 8

Abstract

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Abstract Information industry is one of the major drivers of the world economy. Its rapid growth, however, leads to severe heat problem which strongly hinders further development. This calls for a non-charge-based technology. Magnon, capable of transmitting spin information without electron movement, holds tremendous potential in post-Moore era. Given the cornerstone role of the field effect transistor in modern electronics, creating its magnonic equivalent is highly desired but remains a challenge. Here, we demonstrate a nonvolatile three-terminal lateral magnon field effect transistor operating at room temperature. The device consists of a ferrimagnetic insulator (Y3Fe5O12) deposited on a ferroelectric material [Pb(Mg1/3Nb2/3)0.7Ti0.3O3 or Pb(Zr0.52Ti0.48)O3], with three Pt stripes patterned on Y3Fe5O12 as the injector, gate, and detector, respectively. The magnon transport in Y3Fe5O12 can be regulated by the gate voltage pulses in a nonvolatile manner with a high on/off ratio. Our findings provide a solid foundation for designing energy-efficient magnon-based devices.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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