Crystals
(Jul 2022)
Fully Relaxed, Crack-Free AlGaN with upto 50% Al Composition Grown on Porous GaN Pseudo-Substrate
Nirupam Hatui,
Henry Collins,
Emmanuel Kayede,
Shubhra S. Pasayat,
Weiyi Li,
Stacia Keller,
Umesh K. Mishra
Affiliations
Nirupam Hatui
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
Henry Collins
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
Emmanuel Kayede
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
Shubhra S. Pasayat
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
Weiyi Li
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
Stacia Keller
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
Umesh K. Mishra
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
DOI
https://doi.org/10.3390/cryst12070989
Journal volume & issue
Vol. 12,
no. 7
Abstract
Read online
Fully relaxed, crack free, smooth AlxGa1−xN layers with up to 50% Al composition were demonstrated on pseudo-substrates composed of dense arrays of 10 × 10 µm2 compliant porous GaN-on-porous-GaN tiles. The AlGaN layers were grown in steps for a total of 1.3 µm. The growth conditions necessary to demonstrate high quality films at higher Al compositions also suppressed any sidewall growth.
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