Fully Relaxed, Crack-Free AlGaN with upto 50% Al Composition Grown on Porous GaN Pseudo-Substrate

Nirupam Hatui; Henry Collins; Emmanuel Kayede; Shubhra S. Pasayat; Weiyi Li; Stacia Keller; Umesh K. Mishra

doi:10.3390/cryst12070989

Crystals (Jul 2022)

Fully Relaxed, Crack-Free AlGaN with upto 50% Al Composition Grown on Porous GaN Pseudo-Substrate

Nirupam Hatui,
Henry Collins,
Emmanuel Kayede,
Shubhra S. Pasayat,
Weiyi Li,
Stacia Keller,
Umesh K. Mishra

Affiliations

Nirupam Hatui: Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
Henry Collins: Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
Emmanuel Kayede: Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
Shubhra S. Pasayat: Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
Weiyi Li: Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
Stacia Keller: Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
Umesh K. Mishra: Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA

DOI: https://doi.org/10.3390/cryst12070989
Journal volume & issue: Vol. 12, no. 7
p. 989

Abstract

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Fully relaxed, crack free, smooth AlxGa1−xN layers with up to 50% Al composition were demonstrated on pseudo-substrates composed of dense arrays of 10 × 10 µm2 compliant porous GaN-on-porous-GaN tiles. The AlGaN layers were grown in steps for a total of 1.3 µm. The growth conditions necessary to demonstrate high quality films at higher Al compositions also suppressed any sidewall growth.

Published in Crystals

ISSN: 2073-4352 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Science: Chemistry: Crystallography
Website: http://www.mdpi.com/journal/crystals/

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