Erratum: “Improved carrier confinement and distribution in InGaN light-emitting diodes with three-layer staggered QWs” [AIP Adv. 11, 075027 (2021)]

• Li-E. Cai,
• Chao-Zhi Xu,
• Fei-Bing Xiong,
• Ming-Jie Zhao,
• Hai-Feng Lin,
• Hong-Yi Lin,
• Dong Sun

Affiliations

Li-E. Cai

School of Optoelectronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China

Chao-Zhi Xu

School of Optoelectronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China

Fei-Bing Xiong

School of Optoelectronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China

Ming-Jie Zhao

School of Optoelectronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China

Hai-Feng Lin

School of Optoelectronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China

Hong-Yi Lin

School of Optoelectronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China

Dong Sun

School of Optoelectronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China