Monolithic integrated emitting-detecting configuration based on strained Ge microbridge
Qin Senbiao,
Sun Junqiang,
Jiang Jialin,
Zhang Yi,
Cheng Ming,
Yu Linfeng,
Wang Kang,
Kai Li,
Shi Haotian,
Huang Qiang
Affiliations
Qin Senbiao
Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, Hubei, China
Sun Junqiang
Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, Hubei, China
Jiang Jialin
Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, Hubei, China
Zhang Yi
Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, Hubei, China
Cheng Ming
Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, Hubei, China
Yu Linfeng
Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, Hubei, China
Wang Kang
Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, Hubei, China
Kai Li
Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, Hubei, China
Shi Haotian
Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, Hubei, China
Huang Qiang
Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, Hubei, China
The strain technology is accelerating the progress on the CMOS compatible Ge-on-Si laser source. Here, we report a monolithically integrated microbridge-based emitting-detecting configuration, equipped with lateral p–i–n junctions, waveguide and gratings. The operating wavelength range of the emitting bridge and the detecting bridge are matched through the designed same dimensions of the two microbridges, as well as the strain. Strain-enhanced spontaneous emission and the effect of spectra red-shifting on low-loss transmission of on-chip light are discussed. Temperature dependence experiments reveal that in devices with highly strain-enhanced structure, the strain variation can offset the effect of electron thermalization, so that the performance of the device remains stable when temperature changes around room temperature.
