Gate field controlled and temperature dependent quantum transport in (10,0) carbon nanotube field effect transistor

Abstract

The cylindrically gated (10,0) carbon nanotube field effect transistor having n-i-n device structure has been simulated by using the non-equilibrium Green function method and self-consistent calculations. The gate bias polarity and device temperature have been found to significantly influence the drain current obtained from energy-position resolved current spectrum under ballistic transport limit through simulations. The effect of temperature on drain current is seen to be more pronounced in thermionic emission as compared to band-to-band tunnelling.