Dianzi Jishu Yingyong (Sep 2019)

A 6.4 ppm/℃ and low power consumption bandgap voltage reference

  • Pan Hongze,
  • Wang Dongxing,
  • Song Mingxin

DOI
https://doi.org/10.16157/j.issn.0258-7998.190451
Journal volume & issue
Vol. 45, no. 9
pp. 46 – 49

Abstract

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This paper proposed an innovative CMOS bandgap reference with both low current consumption and high precision over a wide temperature range. The proposed bandgap reference was designed using a standard 0.18 μm CMOS technology. The high precision method can make impedance varied with temperature. While the temperature is rising, the increased impedance can compensate the nonlinear of Vbe. And by improving the structure of conservative bandgap reference, current consumption was extremely shrunk. Measured results have shown the temperature coefficient is 6.4 ppm/℃ over a wide range of -40 ℃~150 ℃. The total power consumption is 1.2 μW while the voltage supply is 5 V.

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