Effects of electrode material and configuration on the characteristics of planar resistive switching devices
H. Y. Peng,
L. Pu,
J. C. Wu,
D. Cha,
J. H. Hong,
W. N. Lin,
Y. Y. Li,
J. F. Ding,
A. David,
K. Li,
T. Wu
Affiliations
H. Y. Peng
Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
L. Pu
Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
J. C. Wu
Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China
D. Cha
Imaging and Characterization Core Lab, King Abdullah University of Science and Technology, Thuwal 23955, Saudi Arabia
J. H. Hong
Imaging and Characterization Core Lab, King Abdullah University of Science and Technology, Thuwal 23955, Saudi Arabia
W. N. Lin
Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
Y. Y. Li
Materials Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal 23955, Saudi Arabia
J. F. Ding
Materials Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal 23955, Saudi Arabia
A. David
Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
K. Li
Imaging and Characterization Core Lab, King Abdullah University of Science and Technology, Thuwal 23955, Saudi Arabia
T. Wu
Materials Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal 23955, Saudi Arabia
We report that electrode engineering, particularly tailoring the metal work function, measurement configuration and geometric shape, has significant effects on the bipolar resistive switching (RS) in lateral memory devices based on self-doped SrTiO3 (STO) single crystals. Metals with different work functions (Ti and Pt) and their combinations are used to control the junction transport (either ohmic or Schottky-like). We find that the electric bias is effective in manipulating the concentration of oxygen vacancies at the metal/STO interface, influencing the RS characteristics. Furthermore, we show that the geometric shapes of electrodes (e.g., rectangular, circular, or triangular) affect the electric field distribution at the metal/oxide interface, thus plays an important role in RS. These systematic results suggest that electrode engineering should be deemed as a powerful approach toward controlling and improving the characteristics of RS memories.
