Materials Research Letters (Jan 2017)

Enhanced Electrical Activation in In-Implanted Si0.35Ge0.65 by C Co-Doping

  • Ruixing Feng,
  • Felipe Kremer,
  • David J. Sprouster,
  • Sahar Mirzaei,
  • Stefan Decoster,
  • Chris J. Glover,
  • Scott A. Medling,
  • John Lundsgaard Hansen,
  • Arne Nylandsted-Larsen,
  • Salvy P. Russo,
  • Mark C. Ridgway

DOI
https://doi.org/10.1080/21663831.2016.1169229
Journal volume & issue
Vol. 5, no. 1
pp. 29 – 34

Abstract

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In this report, we have achieved a significant increase in the electrically active dopant fraction in Indium (In)-implanted Si0.35Ge0.65, by co-doping with the isovalent element Carbon (C). Electrical measurements have been correlated with X-ray absorption spectroscopy to determine the electrical properties and the In atom lattice location. With C + In co-doping, the solid solubility of In in Si0.35Ge0.65 was at least tripled from between 0.02 and 0.06 at% to between 0.2 and 0.6 at% as a result of C–In pair formation, which suppressed In metal precipitation. A dramatic improvement of electrical properties was thus attained in the co-doped samples.

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