MOE Key Laboratory of RF Circuits and Systems, School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, China
Da-Wei Wang
Zhejiang Provincial Key Laboratory of Advanced Micro-Nano Electronic Devices and Smart Systems, Innovative Institute of Electromagnetic Information and Electronic Integration, Zhejiang University, Hangzhou, China
Jing Wang
MOE Key Laboratory of RF Circuits and Systems, School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, China
MOE Key Laboratory of RF Circuits and Systems, School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, China
Wen-Yan Yin
Zhejiang Provincial Key Laboratory of Advanced Micro-Nano Electronic Devices and Smart Systems, Innovative Institute of Electromagnetic Information and Electronic Integration, Zhejiang University, Hangzhou, China
Due to its ultrathin feature, graphene has been recently proposed as diffusion barrier layer for Cu wires. This paper is geared toward developing an equivalent single-conductor (ESC) transmission-line (TL) model for analysis of Cu-graphene interconnects, i.e., Cu wires encapsulated with graphene barriers. Based on the ESC TL model, electrical performances of Cu-graphene interconnects are examined and evaluated. It is shown that the time delay and temperature rise can be reduced by replacing the conventional diffusion barriers in the Cu/low-k interconnect with the graphene barriers.
