HgCdTe-based heterostructures for terahertz photonics

S. Ruffenach; A. Kadykov; V. V. Rumyantsev; J. Torres; D. Coquillat; D. But; S. S. Krishtopenko; C. Consejo; W. Knap; S. Winnerl; M. Helm; M. A. Fadeev; N. N. Mikhailov; S. A. Dvoretskii; V. I. Gavrilenko; S. V. Morozov; F. Teppe

doi:10.1063/1.4977781

APL Materials (Mar 2017)

HgCdTe-based heterostructures for terahertz photonics

S. Ruffenach,
A. Kadykov,
V. V. Rumyantsev,
J. Torres,
D. Coquillat,
D. But,
S. S. Krishtopenko,
C. Consejo,
W. Knap,
S. Winnerl,
M. Helm,
M. A. Fadeev,
N. N. Mikhailov,
S. A. Dvoretskii,
V. I. Gavrilenko,
S. V. Morozov,
F. Teppe

Affiliations

S. Ruffenach: Laboratoire Charles Coulomb, UMR CNRS 5221, University of Montpellier, Montpellier 34095, France
A. Kadykov: Laboratoire Charles Coulomb, UMR CNRS 5221, University of Montpellier, Montpellier 34095, France
V. V. Rumyantsev: Institute for Physics of Microstructures of Russian Academy of Sciences, 603950 Nizhny Novgorod, Russia
J. Torres: Institut d’Electronique et des Systèmes (IES), UMR 5214 CNRS, University of Montpellier, Montpellier 34095, France
D. Coquillat: Laboratoire Charles Coulomb, UMR CNRS 5221, University of Montpellier, Montpellier 34095, France
D. But: Laboratoire Charles Coulomb, UMR CNRS 5221, University of Montpellier, Montpellier 34095, France
S. S. Krishtopenko: Laboratoire Charles Coulomb, UMR CNRS 5221, University of Montpellier, Montpellier 34095, France
C. Consejo: Laboratoire Charles Coulomb, UMR CNRS 5221, University of Montpellier, Montpellier 34095, France
W. Knap: Laboratoire Charles Coulomb, UMR CNRS 5221, University of Montpellier, Montpellier 34095, France
S. Winnerl: Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden− Rossendorf, D−01328 Bautzner Landstraße, Dresden, Germany
M. Helm: Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden− Rossendorf, D−01328 Bautzner Landstraße, Dresden, Germany
M. A. Fadeev: Institute for Physics of Microstructures of Russian Academy of Sciences, 603950 Nizhny Novgorod, Russia
N. N. Mikhailov: A. V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, Russia
S. A. Dvoretskii: A. V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, Russia
V. I. Gavrilenko: Institute for Physics of Microstructures of Russian Academy of Sciences, 603950 Nizhny Novgorod, Russia
S. V. Morozov: Institute for Physics of Microstructures of Russian Academy of Sciences, 603950 Nizhny Novgorod, Russia
F. Teppe: Laboratoire Charles Coulomb, UMR CNRS 5221, University of Montpellier, Montpellier 34095, France

DOI: https://doi.org/10.1063/1.4977781
Journal volume & issue: Vol. 5, no. 3
pp. 035503 – 035503-8

Abstract

Read online

Due to their specific physical properties, HgCdTe-based heterostructures are expected to play an important role in terahertz photonic systems. Here, focusing on gated devices presenting inverted band ordering, we evidence an enhancement of the terahertz photoconductive response close to the charge neutrality point and at the magnetic field driven topological phase transition. We also show the ability of these heterostructures to be used as terahertz imagers. Regarding terahertz emitters, we present results on stimulated emission of HgCdTe heterostructures in their conventional semiconductor state above 30 THz, discussing the physical mechanisms involved and promising routes towards the 5–15 THz frequency domain.

Published in APL Materials

ISSN: 2166-532X (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Technology: Chemical technology: Biotechnology; Science: Physics
Website: http://aplmaterials.aip.org

About the journal