On-Line Multi-Frequency Electrical Resistance Tomography (<i>mf</i>ERT) Device for Crystalline Phase Imaging in High-Temperature Molten Oxide

Prima Asmara Sejati; Noritaka Saito; Yosephus Ardean Kurnianto Prayitno; Koji Tanaka; Panji Nursetia Darma; Miku Arisato; Kunihiko Nakashima; Masahiro Takei

doi:10.3390/s22031025

Sensors (Jan 2022)

On-Line Multi-Frequency Electrical Resistance Tomography (<i>mf</i>ERT) Device for Crystalline Phase Imaging in High-Temperature Molten Oxide

Prima Asmara Sejati,
Noritaka Saito,
Yosephus Ardean Kurnianto Prayitno,
Koji Tanaka,
Panji Nursetia Darma,
Miku Arisato,
Kunihiko Nakashima,
Masahiro Takei

Affiliations

Prima Asmara Sejati: Department of Mechanical Engineering, Division of Fundamental Engineering, Graduate School of Engineering, Chiba University, Chiba 263-8522, Japan
Noritaka Saito: Department of Materials, Kyushu University, Fukuoka 819-0395, Japan
Yosephus Ardean Kurnianto Prayitno: Department of Mechanical Engineering, Division of Fundamental Engineering, Graduate School of Engineering, Chiba University, Chiba 263-8522, Japan
Koji Tanaka: Department of Mechanical Engineering, Division of Fundamental Engineering, Graduate School of Engineering, Chiba University, Chiba 263-8522, Japan
Panji Nursetia Darma: Department of Mechanical Engineering, Division of Fundamental Engineering, Graduate School of Engineering, Chiba University, Chiba 263-8522, Japan
Miku Arisato: Department of Materials, Kyushu University, Fukuoka 819-0395, Japan
Kunihiko Nakashima: Department of Materials, Kyushu University, Fukuoka 819-0395, Japan
Masahiro Takei: Department of Mechanical Engineering, Division of Fundamental Engineering, Graduate School of Engineering, Chiba University, Chiba 263-8522, Japan

DOI: https://doi.org/10.3390/s22031025
Journal volume & issue: Vol. 22, no. 3
p. 1025

Abstract

Read online

An on-line multi-frequency electrical resistance tomography (mfERT) device with a melt-resistive sensor and noise reduction hardware has been proposed for crystalline phase imaging in high-temperature molten oxide. The melt-resistive sensor consists of eight electrodes made of platinum-rhodium (Pt-20mass%Rh) alloy covered by non-conductive aluminum oxide (Al2O3) to prevent an electrical short. The noise reduction hardware has been designed by two approaches: (1) total harmonic distortion (THD) for the robust multiplexer, and (2) a current injection frequency pair: low fL and high fH, for thermal noise compensation. THD is determined by a percentage evaluation of k-th harmonic distortions of ZnO at f=0.1~10,000 Hz. The fL and fH are determined by the thermal noise behavior estimation at different temperatures. At f 100 Hz, the THD percentage is relatively high and fluctuates; otherwise, THD dramatically declines, nearly reaching zero. At the determined fL≥ 10,000 Hz and fH≈ 1,000,000 Hz, thermal noise is significantly compensated. The on-line mfERT was tested in the experiments of a non-conductive Al2O3 rod dipped into conductive molten zinc-borate (60ZnO-40B2O3) at 1000~1200 °C. As a result, the on-line mfERT is able to reconstruct the Al2O3 rod inclusion images in the high-temperature fields with low error, ςfL, T = 5.99%, at 1000 °C, and an average error ⟨ςfL⟩ = 9.2%.

Published in Sensors

ISSN: 1424-8220 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Technology: Chemical technology
Website: http://www.mdpi.com/journal/sensors

About the journal

Abstract

Keywords