Study of dark current random telegraph signal in proton-irradiated backside illuminated CMOS image sensors

Bingkai Liu; Yudong Li; Lin Wen; Dong Zhou; Jie Feng; Xiang Zhang; Yulong Cai; Jing Fu; Jiawei Chen; Qi Guo

Results in Physics (Dec 2020)

Study of dark current random telegraph signal in proton-irradiated backside illuminated CMOS image sensors

Bingkai Liu,
Yudong Li,
Lin Wen,
Dong Zhou,
Jie Feng,
Xiang Zhang,
Yulong Cai,
Jing Fu,
Jiawei Chen,
Qi Guo

Affiliations

Bingkai Liu: Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China; Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China; University of Chinese Academy of Sciences, Beijing 100049, China
Yudong Li: Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China; Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China; Corresponding author at: Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China.
Lin Wen: Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China; Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China
Dong Zhou: Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China; Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China
Jie Feng: Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China; Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China
Xiang Zhang: Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China; Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China; University of Chinese Academy of Sciences, Beijing 100049, China
Yulong Cai: Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China; Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China; University of Chinese Academy of Sciences, Beijing 100049, China
Jing Fu: Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China; Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China; University of Chinese Academy of Sciences, Beijing 100049, China
Jiawei Chen: Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China; Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China; University of Chinese Academy of Sciences, Beijing 100049, China
Qi Guo: Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China; Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China

Journal volume & issue: Vol. 19
p. 103443

Abstract

Read online

The dark current random telegraph signal (DC-RTS) has been investigated in a four-transistor pinned photodiode 0.18-μm backside illuminated CMOS image sensor (BSI CIS). The sensors were irradiated by high energy protons of 50, 60 and 70 MeV, respectively. After exposure to protons, the radiation-induced variations of the number of RTS pixels, the number of RTS levels and transition maximum amplitude are analyzed. The effect of proton energy on RTS occurrence probability is studied using two types of theoretical models. Furthermore, DC-RTS dependence on the epitaxial layer thickness of the sensors is discussed, showing that there is no significant difference for DC-RTS phenomenon in different epitaxial layers.

Published in Results in Physics

ISSN: 2211-3797 (Online)
Publisher: Elsevier
Country of publisher: Netherlands
LCC subjects: Science: Physics
Website: http://www.journals.elsevier.com/results-in-physics/

About the journal

Abstract

Keywords