STRUCTURE AND techological improvments of tmbs diodes

V. S. Kotov; N. F. Golubev; V. E. Borisenko

Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki (Jun 2019)

STRUCTURE AND techological improvments of tmbs diodes

V. S. Kotov,
N. F. Golubev,
V. E. Borisenko

Affiliations

V. S. Kotov: Белорусский государственный университет информатики и радиоэлектроники
N. F. Golubev: Белорусский государственный университет информатики и радиоэлектроники
V. E. Borisenko: Белорусский государственный университет информатики и радиоэлектроники

Journal volume & issue: Vol. 0, no. 5
pp. 12 – 16

Abstract

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An improved structure and technological process of trench MOS barrier Schottky (TMBS) diodes are developed and studied by 2D-simulation. The experiments performed demonstrated simplification of the technology by elimination of one photolithography and improvement of the diode parameters.

Published in Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki

ISSN: 1729-7648 (Print)
Publisher: Educational institution «Belarusian State University of Informatics and Radioelectronics»
Country of publisher: Belarus
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Electronics
Website: https://doklady.bsuir.by/

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