A Bifunctional Silicon Dielectric Metasurface Based on Quasi-Bound States in the Continuum
Jianan Wang,
Weici Liu,
Zhongchao Wei,
Hongyun Meng,
Hongzhan Liu,
Jianping Guo,
Manxing Yang,
Yongkang Song,
Liujing Xiang,
Zhenming Huang,
Haoxian Li,
Faqiang Wang
Affiliations
Jianan Wang
Guangzhou Key Laboratory for Special Fiber Photonic Devices, Laboratory of Nanophotonic Functional Materials and Devices, School of Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510006, China
Weici Liu
School of Engineering, Guangzhou College of Technology and Business, Foshan 528138, China
Zhongchao Wei
Guangzhou Key Laboratory for Special Fiber Photonic Devices, Laboratory of Nanophotonic Functional Materials and Devices, School of Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510006, China
Hongyun Meng
Guangzhou Key Laboratory for Special Fiber Photonic Devices, Laboratory of Nanophotonic Functional Materials and Devices, School of Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510006, China
Hongzhan Liu
Guangzhou Key Laboratory for Special Fiber Photonic Devices, Laboratory of Nanophotonic Functional Materials and Devices, School of Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510006, China
Jianping Guo
Guangzhou Key Laboratory for Special Fiber Photonic Devices, Laboratory of Nanophotonic Functional Materials and Devices, School of Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510006, China
Manxing Yang
Guangzhou Key Laboratory for Special Fiber Photonic Devices, Laboratory of Nanophotonic Functional Materials and Devices, School of Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510006, China
Yongkang Song
Guangzhou Key Laboratory for Special Fiber Photonic Devices, Laboratory of Nanophotonic Functional Materials and Devices, School of Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510006, China
Liujing Xiang
Guangzhou Key Laboratory for Special Fiber Photonic Devices, Laboratory of Nanophotonic Functional Materials and Devices, School of Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510006, China
Zhenming Huang
Guangzhou Key Laboratory for Special Fiber Photonic Devices, Laboratory of Nanophotonic Functional Materials and Devices, School of Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510006, China
Haoxian Li
Guangzhou Key Laboratory for Special Fiber Photonic Devices, Laboratory of Nanophotonic Functional Materials and Devices, School of Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510006, China
Faqiang Wang
Guangzhou Key Laboratory for Special Fiber Photonic Devices, Laboratory of Nanophotonic Functional Materials and Devices, School of Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510006, China
Quasi-bound states in the continuum provide an effective and observable way to improve metasurface performance, usually with an ultra-high-quality factor. Dielectric metasurfaces dependent on Mie resonances have the characteristic of significantly low loss, and the polarization can be affected by the parameter tuning of the structure. Based on the theory of quasi-bound states in the continuum, we propose and simulate a bifunctional resonant metasurface, whose periodic unit structure consists of four antiparallel and symmetrical amorphous silicon columns embedded in a poly(methyl methacrylate) layer. The metasurface can exhibit an extreme Huygens’ regime in the case of an incident plane wave with linear polarization, while exhibiting chirality in the case of incident circular polarized light. Our structure provides ideas for promoting the multifunctional development of flat optical devices, as well as presenting potential in polarization-dependent fields.
