npj 2D Materials and Applications (Aug 2017)

Embedded gate CVD MoS2 microwave FETs

  • Atresh Sanne,
  • Saungeun Park,
  • Rudresh Ghosh,
  • Maruthi Nagavalli Yogeesh,
  • Chison Liu,
  • Leo Mathew,
  • Rajesh Rao,
  • Deji Akinwande,
  • Sanjay Kumar Banerjee

DOI
https://doi.org/10.1038/s41699-017-0029-z
Journal volume & issue
Vol. 1, no. 1
pp. 1 – 6

Abstract

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High-frequency electronics: embedded gates boost MoS2 radio frequency transistors 2D materials enable radio frequency transistors, yet the absence of a bandgap in graphene limits its maximum oscillation frequency. A team lead by Sanjay Kumar Banerjee at the University of Texas at Austin fabricated radio frequency field-effect transistors using monolayer MoS2 grown by chemical vapor deposition. The devices feature an embedded gate structure which ensures optimal gate control over the conducting channel and improves the channel-dielectric interface, whilst requiring a reduced number of fabrication steps. As a result, the device exhibits a maximum oscillation frequency as high as 11.4 GHz, an I ON/I OFF current ratio of 108, and a remarkable transconductance of 70 μS/μm, among the highest achieved so far for MoS2 devices fabricated by means of chemical vapor deposition. These results advance the state-of-the-art performance of atomically thin radio frequency transistors.