Mathematical Modeling of Dielectric Permeability and Volt-Ampere Characteristics of a Semiconductor Nanocomposite Conglomerate

Abstract

Mathematical computer models of the permittivity of silicon-based nanostructures upon interaction with electromagnetic radiation in a wide frequency range have been developed. To implement computer models for studying the electrophysical properties of the structures under study, algorithms and a set of programs have been developed. The results of the study of materials will not only provide fundamental information about the physical effects occurring in composite nanostructures but will also be useful for solving problems related to calculations for given electrophysical problems. For a nanocomposite based on ceramics and semiconductor oxides of zinc grains, resonant bursts of permittivity are observed within a wavelength of 300–400 nm; it has been found that this is due to the presence of electronic polarization of the nanocomposite core. The paper presents the results of modeling the current-voltage characteristics of a nanocomposite based on ceramics and semiconductor grains of zinc oxide. The obtained results show that the geometrical parameters, such as the number of layers and sample width, affect the CVC of the nanocomposite, and the operating point of the CVC shifts. This may be of interest in the development of materials with desired electrical characteristics for the creation of varistors.

Keywords

• mathematical modeling
• computer modeling
• dielectric constant
• electrical conductivity
• nanostructures
• silicon