Communications Physics (Aug 2023)

Charge fluctuations in the intermediate-valence ground state of SmCoIn5

  • David W. Tam,
  • Nicola Colonna,
  • Neeraj Kumar,
  • Cinthia Piamonteze,
  • Fatima Alarab,
  • Vladimir N. Strocov,
  • Antonio Cervellino,
  • Tom Fennell,
  • Dariusz Jakub Gawryluk,
  • Ekaterina Pomjakushina,
  • Y. Soh,
  • Michel Kenzelmann

DOI
https://doi.org/10.1038/s42005-023-01339-1
Journal volume & issue
Vol. 6, no. 1
pp. 1 – 11

Abstract

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Abstract The microscopic mechanism of heavy band formation, relevant for unconventional superconductivity in CeCoIn5 and other Ce-based heavy fermion materials, depends strongly on the efficiency with which f electrons are delocalized from the rare earth sites and participate in a Kondo lattice. Replacing Ce3+ (4f 1, J = 5/2) with Sm3+ (4f 5, J = 5/2), we show that a combination of the crystal electric field and on-site Coulomb repulsion causes SmCoIn5 to exhibit a Γ7 ground state similar to CeCoIn5 with multiple f electrons. We show that with this single-ion ground state, SmCoIn5 exhibits a temperature-induced valence crossover consistent with a Kondo scenario, leading to increased delocalization of f holes below a temperature scale set by the crystal field, T v ≈ 60 K. Our result provides evidence that in the case of many f electrons, the crystal field remains the dominant tuning knob in controlling the efficiency of delocalization near a heavy fermion quantum critical point, and additionally clarifies that charge fluctuations play a general role in the ground state of “115” materials.