In-situ characterization of the semiconductor-metal phase transition in vanadium dioxide thin films

Abstract

Vanadium dioxide (VO2) exhibits a reversible first-order semiconductor-metal phase transition (SMT) near 68 °C at ambient pressure, consisting in a structural transformation from a low-temperature semiconducting monoclinic phase to a high-temperature metallic rutile phase. This phenomenon is investigated on thin films of VO2, with thickness ranging from 15 to 300 nm, which are deposited on a silica substrate by magnetron sputtering. The films are systematically characterized at the morphological, structural, and optical level by using Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Grazing Incidence X-ray Di↵raction (GIXRD), Raman Spectroscopy, Spectrophotometry, and Spectroscopic Ellipsometry. The SMT is investigated in-situ by Optical Spectroscopy in the VIS-NIR spectral range and by Grazing Incidence X-ray Di↵raction (GIXRD). Compared to their bulk counterpart, thin films display broader phase transitions upon thermal excitation. This is evidenced by monitoring the temperature-dependent transmittance at specific wavelengths which reveals a hysteretic behaviour, whose thermal width and amplitude depends on the film thicknesses. Additionally, changes in peak positions and intensities in in-situ GIXRD di↵raction spectra further elucidate the phase transition dynamics.