Low‐voltage linear bootstrapped sampling switch with a‐InGaZnO TFTs

Abstract

Abstract This letter presents a novel linear bootstrapped sampling switch using amorphous indium‐gallium‐zinc‐oxide thin‐film transistors, which is designed using all enhancement n‐type transistors. The switch is simulated at a low supply voltage and a small transistor channel length of 2V and 2μm, respectively. The simulation results across the process corners have shown a maximum variation of 2.2% in the on‐resistance of the switch. Moreover, the worst‐case signal to‐noise‐and‐distortion‐ratio, spurious‐free‐dynamic‐range, and total‐harmonic‐distortion across the process corners have been observed as 66, 70 and −68dB, respectively, at a sampling frequency of 50 kHz. This circuit finds potential applications in implementing an analogue‐to‐digital converter with oxide thin‐film transistors technology, which is an essential block in flexible sensing systems.

Keywords

• Other field effect devices
• Relays and switches