Demonstration of III-Nitride Red LEDs on Si Substrates via Strain-Relaxed Template by InGaN Decomposition Layer

Vincent Rienzi; Jordan Smith; Norleakvisoth Lim; Hsun-Ming Chang; Philip Chan; Matthew S. Wong; Michael J. Gordon; Steven P. DenBaars; Shuji Nakamura

doi:10.3390/cryst12081144

Crystals (Aug 2022)

Demonstration of III-Nitride Red LEDs on Si Substrates via Strain-Relaxed Template by InGaN Decomposition Layer

Vincent Rienzi,
Jordan Smith,
Norleakvisoth Lim,
Hsun-Ming Chang,
Philip Chan,
Matthew S. Wong,
Michael J. Gordon,
Steven P. DenBaars,
Shuji Nakamura

Affiliations

Vincent Rienzi: Materials Department, University of California, Santa Barbara, CA 93106, USA
Jordan Smith: Materials Department, University of California, Santa Barbara, CA 93106, USA
Norleakvisoth Lim: Chemical Engineering Department, University of California, Santa Barbara, CA 93106, USA
Hsun-Ming Chang: Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, USA
Philip Chan: Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, USA
Matthew S. Wong: Materials Department, University of California, Santa Barbara, CA 93106, USA
Michael J. Gordon: Chemical Engineering Department, University of California, Santa Barbara, CA 93106, USA
Steven P. DenBaars: Materials Department, University of California, Santa Barbara, CA 93106, USA
Shuji Nakamura: Materials Department, University of California, Santa Barbara, CA 93106, USA

DOI: https://doi.org/10.3390/cryst12081144
Journal volume & issue: Vol. 12, no. 8
p. 1144

Abstract

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A III-nitride red LED with an active region temperature of 835 °C on a Si substrate utilizing a strain-relaxed template (SRT) is demonstrated. The peak wavelength blueshifts from 670 nm at 1 A/cm2 to 636 nm at 150 A/cm2. The on-wafer external quantum efficiency was 0.021% at 7 A/cm2 with an emission wavelength of 655 nm. The LED grown on a Si substrate exhibited a 116 nm redshift when compared to a co-loaded LED grown on sapphire. This is attributed to the difference in strain state for the III-nitride layers grown on Si compared to sapphire, allowing for more indium to be incorporated in the LED grown on Si. This suggests efficient III-nitride red LEDs and µLEDs on Si with a SRT can be realized with further material, device structure, and processing optimizations.

Published in Crystals

ISSN: 2073-4352 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Science: Chemistry: Crystallography
Website: http://www.mdpi.com/journal/crystals/

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