Luminescence properties related anti-phase domain of alpha-Ga2O3
Yong-Hee Lee,
Byeongjun Gil,
Duyoung Yang,
Mi-Hyang Sheen,
Euijoon Yoon,
Yongjo Park,
Ho-Won Jang,
Sangmoon Yoon,
Miyoung Kim,
Young-Woon Kim
Affiliations
Yong-Hee Lee
Department of Materials Science and Engineering, and Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
Byeongjun Gil
Department of Materials Science and Engineering, and Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
Duyoung Yang
Department of Materials Science and Engineering, and Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
Mi-Hyang Sheen
Department of Materials Science and Engineering, and Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
Euijoon Yoon
Department of Materials Science and Engineering, and Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
Yongjo Park
Advanced Institute of Convergence Technology, Seoul National University, Suwon 16229, Republic of Korea
Ho-Won Jang
Department of Materials Science and Engineering, and Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
Sangmoon Yoon
Department of Physics, Gachon University, Seougnam Gyeonggi-do 13120, Republic of Korea
Miyoung Kim
Department of Materials Science and Engineering, and Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
Young-Woon Kim
Department of Materials Science and Engineering, and Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
This work investigates the relationship between atomic arrangement and luminescence properties in a high-quality alpha-Ga2O3 thin film grown on an Al2O3 single-crystal membrane. The strain induced by merging domain boundaries shows more significant variability in annular darkfield images even though there is no additional gallium concentration confirmed. The bandgap energy of alpha-Ga2O3 is estimated to be 5.56 eV from the CL measurement in a transmission electron microscope. A peak at 320 nm was observed within the domain, while the domain boundary showed spectrum peaks with 380–480 nm. The anti-phase domain (APD) is formed by the instabilities of Al–O bonding templates provided by the Al2O3 substrate. The APD boundary gives a characteristic wavelength of 350 nm, which is the result of the merging boundary of in-phase and anti-phase domains.
