Device level assessment of Ni and Ni45Cu55 as electrodes in Mg2(Si,Sn)-based thermoelectric generators

Abstract

Owing to efficient thermoelectric conversion, non-toxicity, low density and cost, Mg2(Si,Sn)-based solid solutions hold potential for mid-to-high temperature waste heat recovery. Yet, challenges arise from n-Mg2(Si,Sn) degradation at ≥400 °C caused by Mg loss and charge carrier reduction, particularly in Sn-rich compositions. To build a thermoelectric generator (TEG) stable up to 400 °C, we propose binary Mg2Si as the n-type leg. Using Ni45Cu55 and Ni yields low electrical contact resistance (<5 µΩ.cm2) without altering the thermoelectric properties of n-Mg2Si. We fabricated two 2×2 leg TE modules with the same electrode/TE combination for the p-type legs and with Ni or Ni45Cu55 for their n-type legs and tested up to 400 °C, allowing for a direct comparison between these two electrodes for n-Mg2Si at the device level. Ni45Cu55 outperformed Ni, resulting in a peak power density of 0.79 W/cm2 at ΔT ∼375 K and an efficiency competitive to Mg2(Si,Sn)-only TEG. Comparative simulations using a constant property model revealed a strong reduction of internal losses when using Ni45Cu55 as the electrode for n-Mg2Si as the main reason for the high performance. The presented design overcame challenges such as Mg sublimation at targeted application temperature or electrode induced defect formation, resulting in a stable TEG.

Keywords

• Mg2Si
• Thermoelectric
• Electrodes
• Device Modelling