The diamond RF-transistor model

Abstract

In this work is shown that fluent shutter model it is enough well describes work field-effect diamond RF-transistors. Using this model, possible to calculate transistor parameters used electronic parameters of the diamond structure with δ-doped (hydrogen or boron) layer and geometric parameter transistor element. Proof, are calculated by us main parameters model RF-transistor, which it is enough close comply with published experimental result of the measurements real RF-transistors.

Keywords

• field-effect diamond RF-transistor
• fluent shutter model
• volt-ampere characteristic
• maximum power of transistor
• gain of the transistor