2.4 GHz GaN HEMT Class-F Synchronous Rectifier Using an Independent Second Harmonic Tuning Circuit

Jongyun Na; Sang-Hwa Yi; Jaekyung Shin; Hyungmo Koo; Jongseok Bae; Keum-Cheol Hwang; Kang-Yoon Lee; Youngoo Yang

doi:10.3390/s21051608

Sensors (Feb 2021)

2.4 GHz GaN HEMT Class-F Synchronous Rectifier Using an Independent Second Harmonic Tuning Circuit

Jongyun Na,
Sang-Hwa Yi,
Jaekyung Shin,
Hyungmo Koo,
Jongseok Bae,
Keum-Cheol Hwang,
Kang-Yoon Lee,
Youngoo Yang

Affiliations

Jongyun Na: College of Information and Communication Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon 16419, Korea
Sang-Hwa Yi: Electrical Environment Research Center, Korea Electrotechnology Research Institute, Changwon-si 51543, Korea
Jaekyung Shin: College of Information and Communication Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon 16419, Korea
Hyungmo Koo: College of Information and Communication Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon 16419, Korea
Jongseok Bae: College of Information and Communication Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon 16419, Korea
Keum-Cheol Hwang: College of Information and Communication Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon 16419, Korea
Kang-Yoon Lee: College of Information and Communication Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon 16419, Korea
Youngoo Yang: College of Information and Communication Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon 16419, Korea

DOI: https://doi.org/10.3390/s21051608
Journal volume & issue: Vol. 21, no. 5
p. 1608

Abstract

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This paper proposes a class-F synchronous rectifier using an independent second harmonic tuning circuit for the power receiver of 2.4 GHz wireless power transmission systems. The synchronous rectifier can be designed by inverting the RF output port to the RF input port of the pre-designed class-F power amplifier based on time reversal duality. The design of the class-F power amplifier deploys an independent second harmonic tuning circuit in the matching networks to individually optimize the impedances of the fundamental and the second harmonic. The synchronous rectifier at the 2.4 GHz frequency is designed and implemented using a 6 W gallium nitride high electron mobility transistor (GaN HEMT). Peak RF-dc conversion efficiency of the rectifier of 69.6% is achieved with a dc output power of about 7.8 W, while the peak drain efficiency of the class-F power amplifier is 72.8%.

Published in Sensors

ISSN: 1424-8220 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Technology: Chemical technology
Website: http://www.mdpi.com/journal/sensors

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