The Enhanced Performance of Oxide Thin-Film Transistors Fabricated by a Two-Step Deposition Pressure Process
Mingjie Zhao,
Jiahao Yan,
Yaotian Wang,
Qizhen Chen,
Rongjun Cao,
Hua Xu,
Dong-Sing Wuu,
Wan-Yu Wu,
Feng-Min Lai,
Shui-Yang Lien,
Wenzhang Zhu
Affiliations
Mingjie Zhao
Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China
Jiahao Yan
Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China
Yaotian Wang
Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China
Qizhen Chen
Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China
Rongjun Cao
Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China
Hua Xu
Guangzhou New Vision Opto-Electronic Technology Co., Ltd., Guangzhou 510640, China
Dong-Sing Wuu
Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Nantou 54561, Taiwan
Wan-Yu Wu
Department of Materials Science and Engineering, National United University, Miaoli 360302, Taiwan
Feng-Min Lai
Department of Biomedical Engineering, Da-Yeh University, Changhua 51591, Taiwan
Shui-Yang Lien
Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China
Wenzhang Zhu
Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China
It is usually difficult to realize high mobility together with a low threshold voltage and good stability for amorphous oxide thin-film transistors (TFTs). In addition, a low fabrication temperature is preferred in terms of enhancing compatibility with the back end of line of the device. In this study, α-IGZO TFTs were prepared by high-power impulse magnetron sputtering (HiPIMS) at room temperature. The channel was prepared under a two-step deposition pressure process to modulate its electrical properties. X-ray photoelectron spectra revealed that the front-channel has a lower Ga content and a higher oxygen vacancy concentration than the back-channel. This process has the advantage of balancing high mobility and a low threshold voltage of the TFT when compared with a conventional homogeneous channel. It also has a simpler fabrication process than that of a dual active layer comprising heterogeneous materials. The HiPIMS process has the advantage of being a low temperature process for oxide TFTs.
