Nature Communications (Aug 2021)
Unveiling the additive-assisted oriented growth of perovskite crystallite for high performance light-emitting diodes
- Lin Zhu,
- Hui Cao,
- Chen Xue,
- Hao Zhang,
- Minchao Qin,
- Jie Wang,
- Kaichuan Wen,
- Zewu Fu,
- Tao Jiang,
- Lei Xu,
- Ya Zhang,
- Yu Cao,
- Cailing Tu,
- Ju Zhang,
- Dawei Liu,
- Guangbin Zhang,
- Decheng Kong,
- Ning Fan,
- Gongqiang Li,
- Chang Yi,
- Qiming Peng,
- Jin Chang,
- Xinhui Lu,
- Nana Wang,
- Wei Huang,
- Jianpu Wang
Affiliations
- Lin Zhu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- Hui Cao
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- Chen Xue
- Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU)
- Hao Zhang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- Minchao Qin
- Department of Physics, The Chinese University of Hong Kong
- Jie Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- Kaichuan Wen
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- Zewu Fu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- Tao Jiang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- Lei Xu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- Ya Zhang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- Yu Cao
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- Cailing Tu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- Ju Zhang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- Dawei Liu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- Guangbin Zhang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- Decheng Kong
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- Ning Fan
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- Gongqiang Li
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- Chang Yi
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- Qiming Peng
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- Jin Chang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- Xinhui Lu
- Department of Physics, The Chinese University of Hong Kong
- Nana Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- Wei Huang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- Jianpu Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- DOI
- https://doi.org/10.1038/s41467-021-25407-8
- Journal volume & issue
-
Vol. 12,
no. 1
pp. 1 – 8
Abstract
Additives have been widely used for passivating defects in perovskite semiconductors, yet the role of additive and their interaction is not clear. Here, the authors reveal an additive-assisted crystal formation in FAPbI3 perovskite by tracking the chemical interaction in the precursor solution and crystallographic evolution using multi-functional additives.
