Modification of phase boundaries and oxide layer of Ti-TiO2-oxidant system, by intensive thermo - chemical oxidation with rapid thickness growth of dielectric oxide layer n-conductivity type

Abstract

Titanium oxidation process is thermodynamically spontaneous, its speed depends on kinetic and diffusion process parameters. According to optical measurements results, the oxide layer formed on titanium has a thickness of only 1.7 nm. A layer of this thickness is formed at room temperature within two hours, and in 40-50 days it grows to 3.5 nm. Created under natural conditions, TiO2 is a non-stoichiometric dielectric oxide of n-type conductivity. The goal of this work is to significantly speed up the oxidation process by thermochemical oxidation and achieve oxide thicknesses over 100μm. An intensive thermo-chemical process creates disorders with oxygen vacancies excess (O□●●) and with a smaller representation of interstitial disorders (Ti ● ●). In this work, starting from the mentioned disorders - defects, by thermo-chemical oxidation of Ti - TiO2 - oxidant system, by choosing numerous oxidants, a composite system was obtained with a significant increase in disorder degree of active centers - defects about 1018 to 1020/cm3. Thus, the significantly disordered structure of Ti - TiO2 - oxidant system can be a very active dielectric diode in Ti - TiO2 - M system (where M is some vaporized metal). Such a diode has stable rectification properties at high temperatures up to 106 times, which makes it more reliable compared to the active element of semiconductive p-n diode system.

Keywords

• ti-tio2-oxidant system
• non-stoichiometric dielectric oxide
• thermo-chemical oxidation
• positive space charge
• dielectric diode rectifying properties