Recent advances in resistive random access memory based on lead halide perovskite
Jiayu Di,
Jianhui Du,
Zhenhua Lin,
Shengzhong (Frank) Liu,
Jianyong Ouyang,
Jingjing Chang
Affiliations
Jiayu Di
State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene School of Microelectronics, Xidian University Xi'an China
Jianhui Du
State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene School of Microelectronics, Xidian University Xi'an China
Zhenhua Lin
State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene School of Microelectronics, Xidian University Xi'an China
Shengzhong (Frank) Liu
Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University Xi'an China
Jianyong Ouyang
Department of Materials Science and Engineering National University of Singapore Singapore Singapore
Jingjing Chang
State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene School of Microelectronics, Xidian University Xi'an China
Abstract Lead halide perovskites have attracted increasing attention in photovoltaic devices, light‐emitting diodes, photodetectors, and other fields due to their excellent properties. Besides optoelectronic devices, growing numbers of studies have focused on the perovskite‐based electrical devices in the past few years, such as transistors and resistive random access memories (RRAMs). Here, this article summarizes the recent progress the researchers have made of RRAM devices. Primarily, the working mechanism and the key parameters of RRAM are introduced. Generally, the working principles, including the conductive filament model (containing the types of the model of the metal cations‐induced filament and the model of the ions migration in bulk), the interface effect, and the electronic effect are the origins of the RRAM behaviors, and hence, various factors that affect the device performance are explored. Then, RRAMs based on organolead halide perovskite and all‐inorganic perovskite are discussed in terms of different structures, different compositions, and different fabrication methods. Finally, a brief conclusion and a broad outlook are given on the progress and challenges in the field of perovskite‐based RRAMs.
