Luminescence Anomaly of Dipolar Valley Excitons in Homobilayer Semiconductor Moiré Superlattices

Abstract

In twisted homobilayer transition metal dichalcogenides, intra- and interlayer valley excitons hybridize with the layer configurations spatially varying in the moiré. The ground state valley excitons are trapped at two high-symmetry points with opposite electric dipoles in a moiré supercell, forming a honeycomb superlattice of nearest-neighbor dipolar attraction. We find that the spatial texture of layer configuration results in a luminescence anomaly of the moiré trapped excitons, where a tiny displacement by interactions dramatically increases the brightness and changes polarization from circular to linear. At full filling, radiative recombination predominantly occurs at edges and vacancies of the exciton superlattice. The anomaly also manifests in the cascaded emission of small clusters, producing chains of polarization entangled photons. An interlayer bias can switch the superlattice into a single-orbital triangular lattice with repulsive interactions only, where the luminescence anomaly can be exploited to distinguish ordered states and domain boundaries at fractional filling.