Non-equilibrium processes in a gas-discharge cell with plasma contacts

Abstract

Non-equilibrium processes in a gas discharge cell with semiconductor electrodes made of semi-insulating gallium arsenide and sulfur-doped silicon have been studied experimentally. It is shown that plasma contacts to semiconductor electrodes have a positive effect on the stability of gas discharge luminescence under selected conditions. Chromium-compensated gallium arsenide with two plasma contacts stabilizes the image converter operation in a wide range of operating temperatures and wavelengths. It is experimentally confirmed that based on a gas discharge cell with an additional damping cell, a semiconductor photographic ionization chamber provides imaging of objects in the IR region from 0.38 μm to 10 μm and beyond.