Characterization of the inhomogeneous barrier distribution in a
Pt/(100)β-Ga2O3 Schottky diode via its
temperature-dependent electrical properties
Guangzhong Jian,
Qiming He,
Wenxiang Mu,
Bo Fu,
Hang Dong,
Yuan Qin,
Ying Zhang,
Huiwen Xue,
Shibing Long,
Zhitai Jia,
Hangbing Lv,
Qi Liu,
Xutang Tao,
Ming Liu
Affiliations
Guangzhong Jian
Key Laboratory of Microelectronics Devices &
Integration Technology, Institute of Microelectronics of Chinese Academy of
Sciences, Beijing 100029, China
Qiming He
Key Laboratory of Microelectronics Devices &
Integration Technology, Institute of Microelectronics of Chinese Academy of
Sciences, Beijing 100029, China
Wenxiang Mu
State Key Laboratory of Crystal Materials, Key
Laboratory of Functional Crystal Materials and Device, Shandong
University, Jinan 250100, China
Bo Fu
State Key Laboratory of Crystal Materials, Key
Laboratory of Functional Crystal Materials and Device, Shandong
University, Jinan 250100, China
Hang Dong
Key Laboratory of Microelectronics Devices &
Integration Technology, Institute of Microelectronics of Chinese Academy of
Sciences, Beijing 100029, China
Yuan Qin
Key Laboratory of Microelectronics Devices &
Integration Technology, Institute of Microelectronics of Chinese Academy of
Sciences, Beijing 100029, China
Ying Zhang
Key Laboratory of Microelectronics Devices &
Integration Technology, Institute of Microelectronics of Chinese Academy of
Sciences, Beijing 100029, China
Huiwen Xue
Key Laboratory of Microelectronics Devices &
Integration Technology, Institute of Microelectronics of Chinese Academy of
Sciences, Beijing 100029, China
Shibing Long
Key Laboratory of Microelectronics Devices &
Integration Technology, Institute of Microelectronics of Chinese Academy of
Sciences, Beijing 100029, China
Zhitai Jia
State Key Laboratory of Crystal Materials, Key
Laboratory of Functional Crystal Materials and Device, Shandong
University, Jinan 250100, China
Hangbing Lv
Key Laboratory of Microelectronics Devices &
Integration Technology, Institute of Microelectronics of Chinese Academy of
Sciences, Beijing 100029, China
Qi Liu
Key Laboratory of Microelectronics Devices &
Integration Technology, Institute of Microelectronics of Chinese Academy of
Sciences, Beijing 100029, China
Xutang Tao
State Key Laboratory of Crystal Materials, Key
Laboratory of Functional Crystal Materials and Device, Shandong
University, Jinan 250100, China
Ming Liu
Key Laboratory of Microelectronics Devices &
Integration Technology, Institute of Microelectronics of Chinese Academy of
Sciences, Beijing 100029, China
β-Ga2O3 is an ultra-wide bandgap semiconductor with applications in power electronic devices. Revealing the transport characteristics of β-Ga2O3 devices at various temperatures is important for improving device performance and reliability. In this study, we fabricated a Pt/β-Ga2O3 Schottky barrier diode with good performance characteristics, such as a low ON-resistance, high forward current, and a large rectification ratio. Its temperature-dependent current–voltage and capacitance–voltage characteristics were measured at various temperatures. The characteristic diode parameters were derived using thermionic emission theory. The ideality factor n was found to decrease from 2.57 to 1.16 while the zero-bias barrier height Φb0 increased from 0.47 V to 1.00 V when the temperature was increased from 125 K to 350 K. This was explained by the Gaussian distribution of barrier height inhomogeneity. The mean barrier height Φ ¯ b0 = 1.27 V and zero-bias standard deviation σ0 = 0.13 V were obtained. A modified Richardson plot gave a Richardson constant A* of 36.02 A·cm−2·K−2, which is close to the theoretical value of 41.11 A·cm−2·K−2. The differences between the barrier heights determined using the capacitance–voltage and current–voltage curves were also in line with the Gaussian distribution of barrier height inhomogeneity.
