Nature Communications (Mar 2020)
A highly CMOS compatible hafnia-based ferroelectric diode
- Qing Luo,
- Yan Cheng,
- Jianguo Yang,
- Rongrong Cao,
- Haili Ma,
- Yang Yang,
- Rong Huang,
- Wei Wei,
- Yonghui Zheng,
- Tiancheng Gong,
- Jie Yu,
- Xiaoxin Xu,
- Peng Yuan,
- Xiaoyan Li,
- Lu Tai,
- Haoran Yu,
- Dashan Shang,
- Qi Liu,
- Bing Yu,
- Qiwei Ren,
- Hangbing Lv,
- Ming Liu
Affiliations
- Qing Luo
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences
- Yan Cheng
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University
- Jianguo Yang
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences
- Rongrong Cao
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences
- Haili Ma
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences
- Yang Yang
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences
- Rong Huang
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University
- Wei Wei
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences
- Yonghui Zheng
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University
- Tiancheng Gong
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences
- Jie Yu
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences
- Xiaoxin Xu
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences
- Peng Yuan
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences
- Xiaoyan Li
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences
- Lu Tai
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences
- Haoran Yu
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences
- Dashan Shang
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences
- Qi Liu
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences
- Bing Yu
- Xi’an UniIC Semiconductors Co., Ltd.
- Qiwei Ren
- Xi’an UniIC Semiconductors Co., Ltd.
- Hangbing Lv
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences
- Ming Liu
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences
- DOI
- https://doi.org/10.1038/s41467-020-15159-2
- Journal volume & issue
-
Vol. 11,
no. 1
pp. 1 – 8
Abstract
Designing reliable, scalable and high speed computing systems remains a challenge. Here, the authors identify noncentrosymmetric orthorhombic phase in HZO film and demonstrate a CMOS compatible 3D Vertical HZO-based ferroelectric diode array with self-selective property and 20 ns of speed operation.
