Modulating Ohmic Contact Through InGaxNyOz Interfacial Layer for High-Performance InGaN/GaN-Based Light-Emitting Diodes

Binbin Zhu; Swee Tiam Tan; Wei Liu; Shunpeng Lu; Yiping Zhang; Shi Chen; Namig Hasanov; Xuejun Kang; Hilmi Volkan Demir

doi:10.1109/JPHOT.2016.2570422

IEEE Photonics Journal (Jan 2016)

Modulating Ohmic Contact Through InGaxNyOz Interfacial Layer for High-Performance InGaN/GaN-Based Light-Emitting Diodes

Binbin Zhu,
Swee Tiam Tan,
Wei Liu,
Shunpeng Lu,
Yiping Zhang,
Shi Chen,
Namig Hasanov,
Xuejun Kang,
Hilmi Volkan Demir

Affiliations

Binbin Zhu: Luminous! Centre of Excellence for Semiconductor Lighting and Displays, The Photonics Institute, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore
Swee Tiam Tan: Luminous! Centre of Excellence for Semiconductor Lighting and Displays, The Photonics Institute, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore
Wei Liu: Luminous! Centre of Excellence for Semiconductor Lighting and Displays, The Photonics Institute, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore
Shunpeng Lu: Luminous! Centre of Excellence for Semiconductor Lighting and Displays, The Photonics Institute, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore
Yiping Zhang: Luminous! Centre of Excellence for Semiconductor Lighting and Displays, The Photonics Institute, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore
Shi Chen: School of Physics and Mathematical Sciences, Nanyang Technological University, Singapore
Namig Hasanov: Luminous! Centre of Excellence for Semiconductor Lighting and Displays, The Photonics Institute, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore
Xuejun Kang: Luminous! Centre of Excellence for Semiconductor Lighting and Displays, The Photonics Institute, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore
Hilmi Volkan Demir: Luminous! Centre of Excellence for Semiconductor Lighting and Displays, The Photonics Institute, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore

DOI: https://doi.org/10.1109/JPHOT.2016.2570422
Journal volume & issue: Vol. 8, no. 3
pp. 1 – 8

Abstract

Read online

We report the improved performance of InGaN/GaN-based light-emitting diodes (LEDs) through the design and the formation of the InGaxNyOz interfacial layer, which maintains high reflectivity of silver and forms good ohmic contact between pristine silver and p-GaN. The interfacial layer was designed and formed by depositing a thin layer of indium tin oxide (ITO) on top of p-GaN, followed by thermal annealing, to enable the interdiffusion and the intermixing of In, Sn, Ga, O, and N atoms. Both electrical and optical performances of the LED with the optimized InGaxNyOz interfacial layer are improved, thus achieving the highest wall-plug efficiency, compared with those LEDs with and without ITO layers at operation current.

Published in IEEE Photonics Journal

ISSN: 1943-0655 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Engineering (General). Civil engineering (General): Applied optics. Photonics; Science: Physics: Optics. Light
Website: http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=4563994

About the journal

Abstract

Keywords